A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub /> <sub /> <sub />
نویسندگان
چکیده
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved an In2O3 GAA FET with channel thickness (TIO) 3.1 nm, length (Lch) 40 width (Wch) 30 nm and dielectric HfO2 5 nm. The record high drain obtained from about one order magnitude higher than any conventional semiconductor FETs. This extraordinary its related performance ALD promising great opportunities BEOL monolithic 3D integration.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2022
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2022.3210005